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X00619
0.8 A sensitive gate SCR
Features

IT(RMS) = 0.8 A VDRM / VRRM = 600 V IGT = 30 to 200 A
G
A
K
Applications

Limited gate current topologies Ground fault circuit interrupters Overvoltage crowbar protection in power supplies Protection in electronic ballasts Capacitive discharge ignitions Ignitors (lighting, oven...) Table 1. Device summary
IT(RMS) VDRM / VRRM IGT 0.8 A 600 V 30 to 200 A
K G A
TO-92 (X00619-MA)
Description
The X006 SCR can be used as on/off function in applications where topology does not offer high current for gate triggering. This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments.
May 2009
Doc ID 15755 Rev 1
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www..com Characteristics
X00619
1
Table 2.
Symbol IT(RMS) IT(AV) ITSM It di/dt IGM PG(AV) Tstg Tj
Characteristics
Absolute ratings (limiting values, TJ = 25 C unless otherwise specified)
Parameter On-state rms current (180 Conduction angle) Average on-state current (180 Conduction angle) Non repetitive surge peak on-state current It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 s TL = 85 C TL = 85 C Tj = 25 C Tj = 25 C Tj = 125 C Tj = 125 C Tj = 125 C Value 0.8 0.5 10 A 9 0.4 50 1 0.1 - 40 to + 150 - 40 to + 125 A2s A/s A W C Unit A A
Table 3.
Symbol IGT VGT VGD VRG IH IL dV/dt
Electrical characteristics (TJ = 25 C unless otherwise specified)
Test conditions MIN. VD = 12 V, RL = 140 MAX. 0.8 VD = VDRM, RL = 3.3 k , RGK = 1 k IRG = 10 A IT = 50 mA, RGK = 1 k IG = 1 mA, RGK = 1 k VD = 67% VDRM, RGK = 1 k Tj = 125 C Tj = 125 C MIN. MIN. MAX. MAX. MIN. 0.2 5 5 6 40 V V V mA mA V/s Value 30 A 200 Unit
Table 4.
Symbol VTM VTO Rd IDRM IRRM
Static electrical characteristics (per diode)
Test conditions ITM = 1 A, tp = 380 s Threshold voltage Dynamic resistance VDRM = VRRM, RGK = 1 k Tj = 125 C Tj = 25 C Tj = 125 C MAX Tj = 25 C Value 1.35 0.85 245 1 100 Unit V V m A
A
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Table 5.
Symbol Rth(j-a) Rth(j-l) Junction to ambient (DC) Junction to lead (DC)
Characteristics
Thermal resistances
Parameter Value 150 C/W 70 Unit
Figure 1.
Maximum average power dissipation vs. average on-state current
Figure 2.
Average and DC on-state current vs. case temperature
P(W)
0.6
= 180
IT(AV)(A)
1.0 0.9
D.C.
0.5
0.8 0.7 0.6
= 180
0.4
0.3
0.5 0.4
0.2
360
0.3 0.2
0.1
IT(AV)(A)
0.0 0.0 0.1 0.2 0.3 0.4
0.1 0.0
Tl(C)
0 25 50 75 100 125
0.5
0.6
Figure 3.
Average and DC on-state current vs. case temperature
Figure 4.
Relative variation of thermal impedance junction to ambient vs. pulse duration
IT(AV)(A)
1.0 0.9
D.C.
SCU = 0.5 cm2
Zth(j-a)/Rth(j-a)
1.00
SCU = 0.5 cm2
0.8 0.7 0.6
= 180
0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125
0.10
Tamb(C)
0.01 1.E-03 1.E-02 1.E-01
tp(s)
1.E+00 1.E+01 1.E+02 1.E+03
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X00619
Figure 5.
Relative variation of gate trigger, holding and latching current vs. junction temperature
Figure 6.
Relative variation of holding current vs. gate-cathode resistance (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25C]
1.6 1.4 1.2 1.0
IH & IL
IH[RGK] / IH[RGK=1k]
3.5
Typical values
3.0 2.5 2.0 1.5
0.8 0.6 0.4 0.2
IGT
1.0 0.5
Tj(C)
0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.0 1.E-02 1.E-01
RGK(k)
1.E+00 1.E+01 1.E+02
Figure 7.
Relative variatiohn of dV/dt immunity vs. gate-cathode resistance (typical values)
VD = 0.67 x VDRM
Figure 8.
Relative variation of dV/dt immunity vs. gate-cathode capacitance (typical values)
VD = 0.67 x VDRM RGK = 1k
dV/dt[RGK] / dV/dt[RGK=1k]
100.0
dV/dt[CGK] / dV/dt[RGK=1k]
100
10.0
10
1.0
RGK(k)
0.1 1.0E-01 1.0E+00 1.0E+01
CGK(nF)
1 1 10
Figure 9.
Surge peak on-state current vs. number of cycles
Figure 10. Non repetitive surge peak on state current for a sinusoidal pulse and corresponding value of I2T
ITSM(A), I t (A s)
1.E+02
Tj initial = 25C ITSM
2 2
ITSM(A)
10 9 8 7 6 5 4 3 2 1 0 1 10
Repetitive TC=25C Non repetitive Tj initial=25C tp=10ms One cycle
1.E+01
1.E+00
I2t
Number of cycles
1.E-01
tp(ms)
1000
0.01 0.10 1.00 10.00
100
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Figure 11. On-state characteristics (maximum values)
ITM(A)
10.00
Tj max.: Vt0=0.85V Rd=245m
Ordering information scheme
1.00
Tj=125C
Tj=25C
0.10
VTM(V)
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
2
Ordering information scheme
Figure 12. Ordering information scheme
X 006 19 M
Sensitive SCR series Current 006 = 0.8 A Sensitivity 19 = 30 A to 200 A Voltage M = 600 V Package A = TO-92 Space One blank space Package 1AA2 = Bulk 2AL2 = Ammopack 5AL2 = Tape and reel
A
Blank
1AA2
Doc ID 15755 Rev 1
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www..com Package information
X00619
3
Package information
Epoxy meets UL94, V0
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. TO-92 (plastic) dimensions
Dimensions Ref. Millimeters Min.
A a B C
Inches Min. 0.173 0.500 Typ. 0.053 0.100 Max. 0.185 0.146 0.019
Typ. 1.35 2.54 -
Max. 4.70 3.70 0.50
A B C
4.40 12.70 -
F
D
E
D E F a
4
Ordering information
Table 7. Ordering information
Marking Package Weight Base qty 2500 X0619 MA TO-92 0.2 g 2000 2000 Delivery mode Bulk Ammopack Tape and reel
Order code X00619MA 1AA2 X00619MA 2AL2 X00619MA 5AL2
5
Revision history
Table 8.
Date 26-May-2009
Document revision history
Revision 1 First issue Changes
6/7
Doc ID 15755 Rev 1
www..com X00619
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Doc ID 15755 Rev 1
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